 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| STT3434 Elektronische Bauelemente 6.1 A, 30 V, RDS(ON) 34 m N-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product A suffix of "-C" specifies halogen and lead-free DESCRIPTION The STT3434 uses advanced trench technology to provide excellent on-resistance and low gate charge. The TSOP-6 package is universally used for all commercial-industrial surface mount applications. APPLICATIONS Low on-resistance Capable of 2.5V gate drive PACKAGE DIMENSIONS REF. A A1 A2 c D E E1 Millimeter Min. Max. 1.10 Max 0 0.10 0.70 1.00 0.12 Ref 2.70 3.10 2.60 3.00 1.40 1.80 REF. L L1 b e e1 Millimeter Min. Max. 0.45 Ref 0.60 Ref 0 10 0.30 0.50 0.95 Ref 1.90 Ref ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3 Pulsed Drain Current Power Dissipation Linear Derating Factor Thermal Resistance Junction-ambient3 Max. Operating Junction and Storage Temperature Range 1 Symbol VDS VGS VGS@ 4.5V, ID @TA=25 VGS@ 4.5V, ID @TA=70 IDM PD @TA=25 RJA Tj, Tstg Ratings 30 12 6.1 4.9 30 1.14 0.01 110 -55 ~ +150 Unit V V A A W W/ /W 01-June-2005 Rev. A Page 1 of 4 STT3434 Elektronische Bauelemente 6.1 A, 30 V, RDS(ON) 34 m N-Channel Enhancement Mode Power Mos.FET ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise specified) Parameter Drain-Source Breakdown Voltage Gate Threshold Voltage Forward Transconductance Gate Leakage Current Zero Gate Voltage Drain Current (Tj=25) Zero Gate Voltage Drain Current (Tj=75) Symbol BVDSS VGS(th) gfs IGSS IDSS Min. 30 0.6 - Typ. 20 8 1.9 2.6 21 45 40 30 Max. 100 1 5 34 50 12 - Unit V V S nA uA Test Conditions VGS = 0, ID = 250uA VDS = VGS, ID = 1mA VDS = 10V, ID = 6.1A VGS = 12 V VDS = 30 V, VGS = 0 V VDS = 24 V, VGS = 0 V VGS = 4.5 V, ID = 6.1 A VGS = 2.5 V, ID = 2.0 A ID = 6.1 A VDS = 15 V VGS = 4.5 V VDS = 15 V ID = 1 A VGS = 4.5 V RG = 6 RL = 15 Drain-Source On-Resistance2 Total Gate Charge 2 RDS(ON) Qg Qgs Qgd Td(on) Tr Td(off) Tf m Gate-Source Charge Gate-Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time 2 nC ns ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise specified) Parameter Forward On Voltage2 Reverse Recovery Time Notes: 2 Symbol VSD Trr Min. - Typ. 40 Max. 1.2 - Unit V ns Test Conditions IS = 1.7 A, VGS = 0 V IS = 1.7 A, dl/dt = 100A/us 1. Pulse width limited by Max. junction temperature. 2. Pulse width300us, duty cycle 2%. 2 3. Surface mounted on 1 in copper pad of FR4 board, t 5 sec; 180C/W when mounted on Min. copper pad. 01-June-2005 Rev. A Page 2 of 4 STT3434 Elektronische Bauelemente 6.1 A, 30 V, RDS(ON) 34 m N-Channel Enhancement Mode Power Mos.FET CHARACTERISTIC CURVES 01-June-2005 Rev. A Page 3 of 4 STT3434 Elektronische Bauelemente 6.1 A, 30 V, RDS(ON) 34 m N-Channel Enhancement Mode Power Mos.FET 01-June-2005 Rev. A Page 4 of 4 |
Price & Availability of STT3434
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |